SSIE 2026: Technical Program Track 2
GaN and Related Materials
School dates: Monday 06 - Friday 10 July, 2026
SSIE is jointly organized by the IEEE Italy and the Department of Information Engineering (DEI) at the University of Padova. In line with the school tradition, SSIE 2026 Track 2 will cover very timely and cutting-edge research, covering theory, systems and applications in GaN and Related Materials.
The technical program will be available very soon. Stay tuned!
Monday, July 6 | |
09:00 – 13:30 | Free morning |
13:30 – 14:00 | |
14:00 – 15:30 | Elke Meissner – Fraunhofer IISB, Germany Tackling obstacles along the full value chain of GaN based electronics |
15:30 – 15:45 | Coffee Break |
15:45 – 17:15 | Giulio Baratella – imec, Belgium Monolithic GaN Bidirectional Switches for Next Generation Power Electronics |
Tuesday, July 7 | |
09:00 – 10:30 | Farid Medjdoub – CNRS, France GaN Technology Across Power and RF: opportunities, challenges and emerging directions |
10:30 – 10:45 | Coffee Break |
10:45 – 12:15 | Vanya Darakchieva – Linkoping Universtity Wide, Wider, Widest: Fundamentals and frontiers of UWBG Semiconductors |
12:15 – 13:15 | Lunch |
13:15 – 14:45 | Fabrizio Roccaforte – CNR IMM, Catania, Italy Transport Mechanisms and Interface Engineering in Gate Stacks for GaN devices |
14:45 – 15:00 | Break |
15:00 – 16:30 | Tomasz Sochacki – UNIPRESS, Poland GaN on GaN : From Bulk Crystals to Device 2.0 Substrates, Epitaxy and the New Power Electronics |
Wednesday, July 8 | |
08:45 – 17:30 | NETWORKING EVENT (HIKING) With lunch on the mountain chalet SOFT-SKILL SESSION David Polezzi – University of Padova, Italy Coping with stress during Ph.D. |
Thursday, July 9 | |
09:00 – 10:15 | Matteo Meneghini – University of Padova, Italy Advanced Characterization, modeling and reliability aspects for GaN devices |
10:15 – 10:30 | Coffee Break |
10:30 – 11:00 | Martin Mischitz Infineon Technologies Austria IPCEI – A European program for technological sovereignty |
11:00 – 12:15 | Boris Butej – Infineon Charge transport and trapping/detrapping in GaN-on-Si HEMTs |
12:15 – 13:15 | Lunch |
13:15 – 16:15 | ATTENDEE TALKS (see detailed program below) |
Friday, July 10 | |
09:00 – 10:30 | Fabrizio Masin, Infineon From wide bandgap devices to industrial development: daily life of a developer |
10:30 – 10:45 | Coffee Break |
10:45 – 12:15 | Manuel Fregolent, University of Padova What’s N-ext? The future of nitride semiconductors |
12:15 – 12:45 | CLOSING CEREMONY – Matteo Meneghini, Unipd |
12:45 – 14:00 | Lunch |
ATTENDEE TALKS | |
13:15 | Matteo Meneghini, University of Padova Session Opening |
13:30 | Karl Kreuzer, TU Braunschweig, Germany Aluminium nitride for next-generation trench MOSFETs |
13:45 | Ignacio Íñiguez de la Torre Mulas, University of Salamanca Experimental Characterization and Modeling of GaN Technologies at University of Salamanca: Recent Advances |
14:00 | Yousra Bentayeb, CEA LETI Anode Surface Treatment Effects on Schottky Barrier Height and Interface Traps in Pseudo-Vertical Localized Epitaxial GaN-on-Si Diodes |
14:15 | Alberto Marcuzzi, University of Padova On the Conditions Limiting Avalanche in Pseudo-Vertical GaN p-n Diodes under UIS Stress: Insights from Simulations and Measurements |
14:30 | Nuri Elias Said, Univ. Modena and Reggio Emilia Simultaneous “On-the-Fly” Dynamic-RON and Dynamic-QOSS Characterization in Wide-Bandgap Devices |
14:45 | Danylo Bohomolov, Chemnitz University of Technology Defect switching dynamics of local optical random telegraph noise in InGaN LEDs |
15:00 | Nicolas Til Sammler, TU Vienna – Infineon Recovery Dynamics in GaN GITs after Hot-Carrier Stress |
15:15 | Alessandro Ruggieri, Univ. Modena and Reggio Emilia Modeling and Simulation of Power Devices in Advanced Silicon and Beyond Silicon Technologies |
15:30 | Damiano Barresi, University of Catania/CNR-IMM Synthesis of nitride layers for GaN device technologies |
15:45 | Federico Carrera, University of Padova Fabrication and Characterization of β-Ga2O3-Based MIS Structures by Mist-CVD Deposited Al2O3 Dielectric |
16:00 | Ambra Maria Vianello, University of Padova Characterization and Modeling of Vertical Diodes with AlGaN-Based p-type Distributed Polarization Doping |
16:15 | Giorgio Zappalà, University of Padova Silicon Carbide MOSFETs: Lessons Learned and Future Perspectives |
16:30 | Avinas N Shaji, Lund University Process Development of AlYN/GaN HEMTs |
16:45 | Sakarias Kirjonen, Lund University Ion Implantation as a Tool to Achieve Material Limits of III-Nitrides for Power Electronics |
Registrations are CLOSED
Promo Video – SSIE 2026 Track 2
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