Monday, July 6

09:00 – 13:30

Free morning

13:30 – 14:00

Matteo Meneghini – University of Padova, Italy

Welcome address and logistics

14:00 – 15:30

Elke Meissner – Fraunhofer IISB, Germany

Tackling obstacles along the full value chain of GaN based electronics

15:30 – 16:00

Coffee Break

16:00 – 17:30

Giulio Baratella – imec, Belgium

Monolithic GaN Bidirectional Switches for Next Generation Power Electronics

Tuesday, July 7

09:30 – 11:00

Farid Madjdoub – CNRS, France

GaN Technology Across Power and RF: opportunities, challenges and emerging directions

11:00 – 11:30

Coffee Break

11:30 – 13:00

Vanya Darakchieva – Linkoping Universtity

Wide, Wider, Widest: Fundamentals and frontiers of UWBG Semiconductors

13:00 – 14:00

Lunch

14:00 – 15:30

Fabrizio Roccaforte – CNR IMM, Catania, Italy

Transport Mechanisms and Interface Engineering in Gate Stacks for GaN devices

15:30 – 16:00

Coffee Break

16:00 – 17:30

Michal Bockowski – UNIPRESS, Poland

GaN on GaN : From Bulk Crystals to Device 2.0 Substrates, Epitaxy and the New Power Electronics

Wednesday, July 8

08:45 – 17:30

NETWORKING EVENT (HIKING)

With lunch on the mountain chalet

Thursday, July 9

09:30 – 11:00

Matteo Meneghini – University of Padova, Italy

Advanced Characterization, modeling and reliability aspects for GaN devices

11:00 – 11:30

Coffee Break

11:30 – 13:00

Boris Butej – Infineon

Charge transport and trapping/detrapping in GaN-on-Si HEMTs

13:00 – 14:00

Lunch

14:00 – 17:30

STUDENT WORKSHOP

Friday, July 10

09:30 – 11:00

Fabrizio Masin, Infineon

From wide bandgap devices to industrial development: daily life of a developer

11:00 – 11:30

Coffee Break

11:30 – 13:00

TBD

TBD

13:00 – 13:30

CLOSING CEREMONY

13:30 – 14:30

Lunch