Technical Program (Track 2)
SSIE 2024 – Track 2
Forum Bressanone, via Roma 9, 39042, Bressanone, Italia
Monday, July 8 | |
9:00 – 9:30 | Gaudenzio Meneghesso, University of Padova Welcome address and logistics |
9:30 – 11:00 | Ferdinando Iucolano, STMicroelectronics GaN-on Si power and RF: devices and application |
11:00 – 11:30 | Break |
11:30 – 13:00 | Christian Koller, Infineon The effect of charge trapping in GaN-on-Si HEMTs and strategies to mitigate them |
13:00 – 14:30 | Lunch |
14:30 – 16:00 | Arno Stockman, BelGaN Dynamic phenomena in 650V E-mode GaN technology |
Tuesday, July 9 | |
9:00 – 10:30 | Malgorzata Iwinska, UNIPRESS Insights on GaN bulk growth and ultra high pressure annealing (TBC) |
10:30 – 11:00 | Break |
11:00 – 12:30 | Hahn Herwig, AIXTRON Mastering and innovating GaN epitaxy on Si |
12:30 – 14:00 | Lunch |
14:00 – 15:30 | Fabrizio Roccaforte, CNR Contacts and dielectrics in GaN devices: physics and technology |
Wednesday, July 10 | |
9:00 – 10:30 | Christian Huber, Bosch Vertical GaN on foreign substrates: Concepts, challenges and perspectives |
10:30 – 11:00 | Break |
11:00 – 12:30 | Farid Medjdoub, CNRS Recent results on vertical GaN on foreign substrates |
12:30 – 14:00 | Lunch |
14:00 – 14:45 | Tommaso Caldognetto, University of Padova Applications of Wide Bandgap Transistors in Power Conversion Circuits |
14:45 – 15:30 | Fregolent Manuel, University of Padova Vertical GaN: reliability and trapping |
Thursday, July 11 | |
9:00 – 10:30 | Matteo Buffolo, University of Padova Future perspectives for GaN and SiC power transistors & the role of defects in the reliability of wide-bandgap devices |
10:30 – 11:00 | Break |
11:00 – 12:30 | Schulz Juergen & Tayyab Muhammad-Farhan, VALEO Trends for future automotive power electronics |
12:30 – 14:00 | Lunch |
14:00 – 17:00 | STUDENT WORKSHOP Presentations from PhD students |
Friday, July 12 | |
9:00 – 10:30 | Oliver Hilt, FBH Recent progress of GaN devices for RF applications (TBC) |
10:30 – 11:00 | Break |
11:00 – 12:30 | Giovanni Verzellesi, UNIMORE TCAD modeling of GaN-based RF and power devices |
12:30 – 13:30 | Gaudenzio Meneghesso, University of Padova Best Student Presentation Award Ceremony |
13:30 – 14:00 | 5 ECTS final test |
What are you waiting for?
Technical Endorsement
