Technical Program

SSIE 2022

School dates: 11-15 July, 2022. Brixen, Italy.

Track no. 2 - Gallium Nitride and Semiconductors for Power Conversion: Present and Future of Materials for Energy Efficiency

Monday, July 11

GaN: Advanced Growth Methods

8:00 – 8:30

G. Meneghesso, M. Meneghini, M. Rossi, DEI, University of Padova – Welcome, Introduction and Logistics

8:30 – 10:30

Plenary Session

Marcello Caleffi, University of Naples, Federico II – Quantum Internet: Wiring the Weirdness

10:30 – 11:00

Break

11:00 – 12:30

Bernd Schineller, AIXTRON – GaN Epitaxy: Novel Aspects and Perspectives

12:30 – 14:00

Lunch Break

14:00 – 15:30

Malgorzata Iwinska, Unipress – Bulk GaN growth and optimization

Tuesday, July 12

Advanced Processing and Characterization

9:00 – 10:30

Farid Medjdoub, IEMN – Processing and fabrication for advanced GaN FETs

10:30 – 10:45

Break

10:45 – 12:15

Karen Geens, IMEC – Vertical device processing and reliability

12:15 – 14:00

Lunch Break

14:00 – 15:30

Elke Meissner, Fraunhofer-IISB – Characterization and microscopy on nitrides

Wednesday, July 13

Industrialization, Stability, Failure Analysis

9:00 – 10:30

Christian Huber, BOSCH – GaN industrialization: from lateral to vertical

10:30 – 10:45

Break

10:45 – 12:15

Edwin Piner, Texas State University – III-Nitrides and Diamond Integration, Challenges and Opportunities

12:15 – 14:00

Lunch Break

14:00 – 15:30

Andreas Graff, Fraunhofer-IMWS – Advanced techniques for GaN failure analysis

Thursday, July 14

Trapping Phenomena and Modeling

9:00 – 10:30

Clemens Ostermaier, Infineon Technologies Austria – GaN trapping and optimization

10:30 – 10:45

Break 

10:45 – 12:15

Giovanni Verzellesi, University of Modena and Reggio Emilia – GaN modeling: tutorial

12:15 – 14:30

Lunch Break

14:30 – 18:00

Student Workshop & Best Presentation Award

Friday, July 15

Competing Materials: Status and Perspectives  

8:30 – 9:45

Giovanni Busatto, University of Cassino – Si Power Devices

9:45 – 11:00

Mikael Ostling, KTH (Stockholm) – SiC Devices

11:00 – 11:15

Break


11:15 – 12:30

Carlo De Santi, University of Padova – Gallium Oxide and its Advantages

Technical endorsement

ITALY CHAPTER
NORTH ITALY CHAPTER